| 摘要 |
PURPOSE:To sharply reduce the effect of impurities by covering a section in which a copper plate that fixes polysilicon as cathode material is exposed, with a block made of the same material as the cathode material and sputtering it. CONSTITUTION:A block 9 made of polysilicon capable of being contained in the space between an electrostatic shield plate 1, polysilicon, and packing plate and provided with a brim that covers all surfaces of the packing plate 3, and overlaps the external circumference of polysilicon 2 by 1 to 2mm. is mounted. In this case, the block 9 adheres tightly to the packing plate 3 and the polysilicon 2 and is mounted spaced at an interval of approximately 1mm. from the electrostatic shield plate 1. |
