| 摘要 |
PURPOSE:To obtain the IC strong in resistance to surge current by a method wherein, in growing an epitaxial layer of reverse conductivity type on a semiconductor substrate of one conductivity type, providing this layer with source and drain regions of one conductivity type, and further forming a one-conductivity type region connecting the gate electrode in adjacency to the source region into an IC, an end of the one-conductivity type region in adjacency is provided with a region of the same conductivity type as that of the epitaxial layer and of high impurity concentration. CONSTITUTION:A P type layer 22 is epitaxially grown on the N type semiconductor substrate 21, where N<+> type regions 24 and 25 serving as the source and drain of an MOSFET are diffusion-formed, and another N<+> type region 23 is formed on the region 24 side. Next, a thin gate oxide film is formed between the regions 24 and 25, the part except it being covered with a thick oxide film, and a required aperture being then bored; thus, a gate electrode 27 provided on the gate oxide film is connected to one end of the region 23, and a wiring 26 is connected to the other end of the region 23. In this construction, a P<+> type region 28 is additionally provided in contact with the region 23 and the other end, resulting in the generation of a new diode by the regions 23 and 28. |
