| 摘要 |
PURPOSE:To prevent the variation in end surface reflectance oby a method wherein the uppermost layer of a protection film adhered on a cavity end surface is formed on an oxygen-impermeable film, thus preventing the oxidization of the end surface protection film. CONSTITUTION:One of cavity cross-sections of a GaAs-GaAlAs series semiconductor laser 1 having an oscillation wavelength, e.g., 8,300Angstrom is coated with Si 3, Al2O3 2 thereon, further Si 3, and Al2O3, respectively. Since this device is formed of Al2O3 in the uppermost layer, the Si 3 is not oxidized; therefore, variation can be prevented from generating in the end surface reflectance. |
