| 摘要 |
PURPOSE:To prevent the film adherence to a window and to cause an Si3H4 film for a very large scale integration element to vapor grow with exciting light in the vicinity of said window. CONSTITUTION:A low pressure mercury lamp 101 in a vacuum chamber 102 emits light of a 185nm wavelength, which is radiated through a window 103 of synthetic quartz to excite NH3 to be radical. SiH4 is introduced from 111 and discharged through 104, forming an SiH4 laminar flow 112. NH3 is introduced from 110 to form an NH3 laminar flow 109 over a table 107 and substrate 108, and discharged from 106. SiH4 for forming an Si3N4 film is introduced by dispersion from the SiH4 laminar flow 112. When the relative flow rate of the SiH4 laminar flow 112 to the NH3 laminar flow 109 is ten or more, any reverse dispersion can be pratically negligible. Consequently, the window 103 is prevented from the adherence of a film and the deposition rate is not reduced substantially, so that a film can be formed into a thickness of 500Angstrom or more. Alternatively, a window may be provided with a plurality of openings to supply SiH4 from a lamp chamber to a reaction chamber. |
