| 摘要 |
<p>Separate areas of an active unipolar barrier (3), e.g. a Schottky barrier, of a semiconductor device are located between closely-spaced field-relief regions (4) which provide the device with an improved voltage blocking characteristic. The flow of minority carriers into the adjacent body portion (2) under forward bias is restricted by providing, at least at the areas of the field-relief regions (4), a layer (14) of different material from that of the body portion (2) and from that of the unipolar barrier-forming means (11). The layer (14) of different material may form a high-impedance electrical connection with the field-relief regions 4, and/or it may form with the body portion a heterojunction such as, for example, a Schottky barrier of higher barrier height, a barrier between different band gap materials or a MIS structure, which heterojunction forms part of the field-relief regions (4).</p> |
