PHOTOELECTRONIC CONVERSION DEVICE AND METHOD OF PRODUCING SAME

摘要

In the typical embodiment of the invention described herein, a photoelectronic conversion device comprises a transparent insulative substrate, a first transparent electrode layer of Sn-incorporated In2O3 having a relatively low sheet resistance and a thickness of about 1000 ANGSTROM , a second transparent electrode layer of SnO2 having a relatively high plasma resistance and a thickness of several tens to several hundreds of Angstroms, an amorphous semiconductor film formed by a plasma CVD process at a substrate temperature of about 200 DEG -250 DEG C., and a metal electrode.