| 摘要 |
<p>A semiconductor device manufacturing method includes an epitaxial growth step in which a polycrystalline semiconductor layer and a single-crystal semiconductor layer are selectively and simultaneously formed on a semiconductor substrate. Before the epitaxial growth step, an underlayer (12) for the formation of the polycrystalline layer, which has a surface layer a layer (12b) of a substance which will not react with the gas supplied to the surface of a semiconductor substrate (11) during the epitaxial growth step, is formed over a portion of the semiconductor substrate (11) at which the polycrystalline semiconductor layer will be formed. By so doing, it is possible to prevent the formation of a single crystal or large crystal grains in the boundary between a polycrystalline semiconductor layer (13p) and a single-crystal semiconductor layer (13s) formed simultaneously by epitaxial growth, so as to make clear the boundary between the polycrystalline semiconductor layer and the single-crystal semiconductor layer.</p> |
