Induction heated reactor system for chemical vapor deposition.

摘要

The disclosure relates to a vapor deposition system which includes a generally closed reaction chamber (60) having walls (62) formed from a dielectric material. A susceptor (64) having recesses (68) for carrying a plurality of semiconductor wafers is positioned within the chamber. An induction coil (75) is positioned in the vicinity of the susceptor for carrying an alternating electric current to produce induction heating of the susceptor and thereby heating the back side of the wafers thereon. Low frequency induction heating and variations in susceptor thickness are used to produce uniformity of temperature. Boundary control arrangement between the susceptor surface and wafer surfaces are used to improve deposition uniformity. A coating (74) is formed on wall portions (61) of the reaction chamber facing the susceptor and wafers carried thereon for reflecting heat energy radiated from the susceptor and the wafers positioned thereon back to the susceptor and the wafers to reduce substantially the heat loss therefrom and thereby to reduce substantially the thermal gradient from front to back surfaces of the wafers.