| 摘要 |
<p>Disclosed is a semiconductor device comprising a control electrode (30) for forming carriers at a junction interface between first and second layers (17,12) of different materials and for controlling the carriers, a first electrode (29) which is electronically connected to the carriers, and a second electrode region (18) for taking out the carriers in a direction perpendicular to the junction interface. Since the two-dimensional carriers are caused to flow as a current in the direction perpendicular to the plane at which the carriers exist, a large current can be derived as an operating current. </p> |
