| 摘要 |
PURPOSE:To form a desired film in a controlled state by cleaning-etching substrate surface in a chemically active atmosphere, thence substituting the atmosphere and performing solid phase-gas phase reaction etc. CONSTITUTION:An inert gas or mixed gases of an inert gas and hydrogen are activated by using induction energy. In this atmosphere, the surface of a substrate such as semiconductor is cleaning-etched. The atmosphere is substituted with a gas of nitride, oxide, carbide, etc. without allowing said surface to contact air. If necessary, a silicide gas and germanium compound are included simultaneously into this substituted atmosphere. A desired thin film is formed on the substrate surface having been cleaning-etched by solid phase-gas phase reaction or gas phase- gas phase reaction or gas phase reaction in this substituted atmosphere. The pure film is grown as desired by this method without contaiminating or inclusion of foreign matter. |
