| 发明名称 |
HIGH MOBILITY AMORPHOUS SILICON DISPLAYING NON- DISPERSIVE TRANSPORT PROPERTIES |
| 摘要 |
<p>The present invention teaches a combination of parameters for the glow discharge decomposition of silane deposition of an amorphous silicon semiconductor having non-dispersive high mobility transport of majority carriers through the semiconductor material, useful in switching devices such as diodes, transistors and the like.</p> |
| 申请公布号 |
CA1190126(A) |
申请公布日期 |
1985.07.09 |
| 申请号 |
CA19810376096 |
申请日期 |
1981.04.23 |
| 申请人 |
EXXON RESEARCH AND ENGINEERING COMPANY |
发明人 |
TIEDJE, J. THOMAS;MOREL, DON L.;ABELES, BENJAMIN |
| 分类号 |
C01B;C30B25/00;(IPC1-7):C30B25/00 |
主分类号 |
C01B |
| 代理机构 |
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| 地址 |
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