| 摘要 |
PURPOSE:To prevent unnecessary atoms of a decomposition product from entering a deposited thin film as an impurity when a gaseous compound is decomposed by irradiating light to form a thin film of a specified substance on the surface of a substrate, by irradiating other light which is absorbed in the unnecessary atoms. CONSTITUTION:A substrate 1 is placed in a deposition chamber 2, and a gaseous mixture of gaseous Mo(CO)3 with Ar, He or other gas is fed to the chamber 2 from a gas feeding source 11. At the same time, ultraviolet rays are irradiated from the 1st light source 4 to decompose the Mo(CO)3 into Mo and CO. This Mo forms a thin film 5 on the substrate 1. When light of specified wavelengths emitted from the 2nd light source 7 is irradiated, the CO moves lively and leaves the Mo deposition region, so it does not enter a thin Mo film, and a thin Mo film 5 of high purity is obtd. |
