| 摘要 |
PURPOSE:To obtain a semiconductor light-emitting device, a radiant wavelength thereof is stabilized and which has extremely high coherency, by forming a quantum well layer, in which the thickness of an active layer in the semiconductor light-emitting device is smaller than the de.Broglie wavelength of electrons, and forming an active layer as one layer or a plurality of active layers through a barrier layer. CONSTITUTION:When a semiconductor light-emitting device has a single quantum well layer, a diffraction grating is formed on the interface between an N type lnP confinement layer 12 and an InGaAsP guide layer 13. These each InGaAsP four-element layer is composed of the guide layer 13 in a luminescence wavelength such as 1.30mum, an active layer 14 in one such as 1.53mum and a contact layer 16 in one such as 1.30mum, and the guide layer 13 is brought to a value such as 20nm and the active layer 14 to a value such as 10nm in their thickness. The period of a diffraction grating on the interface between the confinement layer 12 and the guide layer 13 is brought to 480mum, and beams having 1.55mum wavelength by transition between quantum units E1 and Ehh1 are selected. When the semiconductor light-emitting device has multilayers, three layers of the InGaAsP active layers 14 are formed, InGaAsP barrier layers 15 are inserted among the layers 14, and others are executed in the same manner as said single quantum well layer. |
