| 摘要 |
PURPOSE:To improve a semiconductor device in its capability to withstand static voltages and in reliability by a method wherein a simple construction is introduced for an electrode employing a multilayer structure consisting of low-resistance and high-resistance conductive layers. CONSTITUTION:An amorphous Si thin film 2 is deposited on a rigid substrate 1 made of metal, flexible resin, glass, glass-epoxy, phenol resin, or the like. A conductive film to be formed into an electrode is formed before the depositing of the thin film 2 in case the substrate 1 is composed of such an insulating material as glass. Then, on the thin film 2, a transparent electrode film 3 is laid by evaporation. Deposited on the transparent electrode film 3 is a resin coating 4 protecting the external surface against atmosphere and mechanical impacts. The resin coating 4 covers the external surface except the location reserved for an electrode to collect power to be outputted. On the region not coated with resin, a collecting electrode first layer 5 is formed of such low-resistance conductive material such as Ag paste. On the collecting electrode first layer 5, a collecting electrode second layer 6 is formed of high-resistance conductive material such as carbon paste. |
