| 摘要 |
PURPOSE:To form a resist film pattern with high precision by forming a mixture of an opaque film mask pattern in a prescribed form and a semitransparent film made of the same material but thinned to make it semitransparent in a prescribed form on the principal face of a transparent base. CONSTITUTION:An opaque Cr film pattern 23 made of Cr, etc. is formed on the principal face of a transparent glass base 22, and a semitransparent film pattern 24 of the same material of Cr, having an about 1/10 thickness of that of the film 23, and a desired light transmittance obtained by thinning it, is laminated on the pattern 23 and on the base 22 continuously in contact with the circumference of the side of the pattern 23 in a prescribed width. When a resist film 4 is exposed in conditions controlled on the basis of the time for giving a proper exposure, light is perfectly intercepted in the region of the resist film 4 corresponding to the pattern 23, and in the region corresponding to the pattern 24, exposure is made proper, and a part of exposure light incident from the side is intercepted. |
