| 摘要 |
PURPOSE:To reduce distance between groove-shaped capacitors and to improve device capability to withstand errors in software by a method wherein a groove- shaped capacitor is provided with a region diffused with an impurity as the second capacitor electrode and an opposed electrode as their first capacitor electrode. CONSTITUTION:A part of each of activation regions 24a, 24b and both ends of an activation region 24c are respectively provided with groove-shaped capacitors 25a-25d. The groove-shaped capacitors 25a, 25b are positioned adjacent to each other. The groove-shaped capacitor 25a is provided with a groove 26a, typically 3mum deep, extending from the surface of a p type Si layer 22 to the inside of an Si substrate 21. In the p type Si layer 22 and Si substrate 21 inside the groove 26a, an n type diffused region 27a doped to be of the second conductivity type is formed. In a groove-shaped capacitor 25a designed as such, an electrode 29 serves as the first capacitor electrode while the n type diffused region 27a serves as the second capacitor electrode. |
