| 摘要 |
PURPOSE:To easily obtain vertical magnetic anisotropy with less aging without bias sputtering by forming the material with Tb and CO and allowing inclusion of hydrogen of the specified amount. CONSTITUTION:A rate of inclusion of hydrogen is controlled in the range 5X 10<-3>-1X10<-1> in the composition for Co. Composition of Tb is set to the range of 10-50% in atomic percentage within a metal element. For example, in order to allow inclusion of hydrogen having composition ratio of 1X10<-2> for Co into a thin film having the composition of Tb<27>Co<73>, a target is formed so that Tb has an area ratio of 35%. After exhaustion to a vacuum condition of 7X10<-7>Torr, the Ar gas including the hydrogen in a pressure of 10% is used. The high frequency sputtering is carried out by applying a high frequency power of 100W under a gas pressure of 5X10<-2>Torr.
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