| 摘要 |
PURPOSE:To realize an electrode with excellent heat-withstanding, low-resistance features by a method wherein a metal to easily react with Si is deposited on an Si layer and then is coated by a heat-withstanding metal before silification. CONSTITUTION:Pt is the first metal 28 to be deposited on the entire surface of a substrate 21. Mo is the second metal 29 to be further deposited on the first metal 28. Heat treatment results in the formation of a metal silicide electrode 30 on an N<+> diffused layer 27 and gate electrode 24. That is, the first metal 28, second metal 29 on the N<+> layer 27 are converted into metal silicides. Similarly, the first metal 28, second metal 29 on the gate electrode 24 are converted into metal silicides. On the other hand, the first metal 28, second metal 29 on a relatively thick SiO2 layer 22 and side wall 25 are converted not into silicides but into a mixture layer 31 including Pt and Mo. Only the mixture layer 31 is removed in the next process, whereafter metal silicides can be formed by self- alignment on the exposed Si. |
