| 摘要 |
PURPOSE:To obtain satisfactory uniformity of the distortion distribution of the ion implantation distorted layer and also to increase the effective anisotropic magnetic field by implanting the ion seed with small average range dispersion and by executing the high-temperature thermal processing. CONSTITUTION:An ion implantation distorted layer is constituted by implanting the small ion seed where ion average range dispersion in the garnet film is 100Angstrom or below. After the ion implantation process, the high-temperature thermal processing at 450 deg.C or above is executed. Then, the distortion distribution in the garnet film is averaged, and uniformity of the distortion distribution becomes satisfactory. The anisotropy magnetic field in the planar direction is increased by the high-temperature thermal processing, and the effective anisotropy magnetic field is increased. Thus, the ion implantation magnetic bubble element with satisfactory reproducibility and mass-producibility can be obtained.
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