| 摘要 |
<p>PURPOSE:To conduct an electrode formed on the front surface of a semiconductor chip and a metal layer coated on the back surface of the chip by forming at least one section of the chip in an inverted trapezoidal shape, forming extensions from the edge of the surface on a plurality of electrodes, and connecting the extensions to the metal film coated on the side of the chip. CONSTITUTION:A GaAs crystal substrate 1 formed with a source electrode 2, a gate electrode 3 and a drain electrode 4 of an FET is formed to a thickness of approx. 120mum by lapping, chemical etching. A dicing line 8 is formed by a photoresist layer 7 on the back surface of the semiconductor substrate. Then, it is cut on the line 8 by a blade dicing saw unit. Then, the formed groove is chemically etched. Thus, the shape of the groove is formed in an inverted trapezoidal shape, and the bottom is partly exposed at 2a of the electrode 2 by the progress of side etching. Then, after the photoresist film is removed, the deposition is performed. The depositing metal is entirely coated on the back surface, side surface and the source electrode 2a of partly exposed in the groove bottom of the chip, thereby performing the conduction between the metal 11 on the back surface of the chip and the electrode 2.</p> |
