| 摘要 |
PURPOSE:To reduce the crystalline ground boundary density of a semiconductor layer by forming a semiconductor layer on an insulating layer formed on the main surface of a semiconductor substrate, implanting neutral and impurity element ions on a region which includes the vicinity of the boundary between the substrate or the insulating layer and the semiconductor layer, and treating it. CONSTITUTION:A thin semiconductor layer made of polycrystalline silicon to become a resistor is formed on a thermal oxide layer (SiO2) is formed on the surface of a semiconductor substrate, anisotropic (IV group) element ions such as Si, Ge are implanted to the thin semiconductor layer to convert it into an amorphous state. In this case, the implantation of neutral element ions is performed by relatively high implanting energy, and the neutral element of the region which includes the boundary between the thermal oxide film and the thin semiconductor layer is selectively converted into amorphous state. Then, impurity ions to become carrier is implanted to the polycrystalline silicon layer, and then annealed to form a resistor. Thus, the crystalline particles of the semiconductor layer are increased to reduce the crystalline grain boundary density to readily control the resistance value of the semiconductor layer, thereby obtaining a stable resistor in good reproducibility. |
