| 摘要 |
<p>PURPOSE:To prevent a gate and a source from being short-circuited and to improve manufacture yield greatly by composing a gate line of a layer of an Al material and a layer of a Cr material and forming the gate insulation layer side of the gate line by using a layer of a Cr material. CONSTITUTION:The gate line 1 is formed by forming the layer 1a of the Al material on the surface of a substrate by, for example, sputtering and then forming the layer 1b of the Cr material thereupon continuously. A gate insulation layer 13, on the other hand, is made of SiN, etc., filmed on the gate line 1 by, for example, plasma CVD. A semiconductor 14 is, for example, an amorphous Si semiconductor filmed continuously by plasma CVD, etc., after the gate insulation film 13 is formed. A matrix type TFT array 7 which is constituted as mentioned above and used for a matrix type liquid-crystal display device, etc., suppresses the growth of hillock, etc., of Al by covering the Al with Cr as the gate line 1 to prevent the gate electrode and source electrode from being short-circuited, thereby improving the manufacture yield.</p> |
