发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To eliminate the possibility of disconnection due to corrosion, by connecting aluminum only on the surface of a diffused region, by sintering same to turn the contacting portion thereof into an alloy, and by connecting an aluminum wiring thereon. CONSTITUTION:After a diffused region 2 and an oxide film 5 of SiO2 or the like are formed, aluminum is connected on the top surface of the diffused region 2. Then, sintering is conducted in this state to turn the contacting plane 8 of the diffused region 2 with aluminum 7 into an alloy. Next, aluminum 9 operating as a wiring is connected thereon. Sintering is not conducted on the occasion. Therefore the surface of the aluminum wiring 9 is kept in a flat state brought about when it is connected. Then, a protective film 10 such as a nitride film is connected thereon so as to make the surface of the wiring stable. Since no sintering is conducted after the aluminum wiring is formed, there is no possibility of protuberance being formed in the portion of the aluminum wiring as is the case with the conventional devices.</p>
申请公布号 JPS61193468(A) 申请公布日期 1986.08.27
申请号 JP19850031556 申请日期 1985.02.21
申请人 NEW JAPAN RADIO CO LTD 发明人 KAGEYAMA NOBUO
分类号 H01L23/52;H01L21/3205;(IPC1-7):H01L21/88 主分类号 H01L23/52
代理机构 代理人
主权项
地址