发明名称 DRY ETCHING METHOD AND DEVICE THEREOF
摘要 PURPOSE:To enable to be constant always the accelerating voltage of ions and to lessen the distribution of an ion energy in a desired extent in a dry etching device by a method wherein the dry etching device is constituted in such a structure that the surface potential of the electrode is measured and a desired voltage waveform is impressed on the above-mentioned electrode under the measured data. CONSTITUTION:A cathode electrode 12, whereon the substrate to be treated 11 has been placed, is provided with a potential measuring part 20A, by which the surface potential of the electrode 12 is measured, and the measured data are inputted in a contol voltage generator 17. The generator 17 generates a control voltage corresponding to the measured input data and controls the output of a power amplifier 18 to control an accelerating voltage to apply to the cathode electrode 12. As the result of the above-mentioned control, the accelerating voltage, which is applied to the electrode 12, becomes such a voltage waveform that the plasma-electrode field strength becomes constant. According to this method, the distribution of an ion energy can be lessened in a desired extent. As a result, the etching characteristics of the dry etching device can be significantly improved.
申请公布号 JPS60126832(A) 申请公布日期 1985.07.06
申请号 JP19830234319 申请日期 1983.12.14
申请人 HITACHI SEISAKUSHO KK 发明人 OOTSUBO TOORU
分类号 H01L21/302;C23F4/00;H01J37/32;H01L21/306;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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