| 摘要 |
PURPOSE:To reduce junction capacitance and base resistance, and to improve withstanding voltage by directly forming a base leading-out electrode on an active base and forming an isolation insulating layer under the base leading-out electrode. CONSTITUTION:An N<+> buried layer (a collector) 21, inter-element isolation insulating layers 22 and a base isolation insulating layer 24 between a collector and a base are shaped on a P type semiconductor substrate 20. An N type epitaxial layer 25, a P<-> diffusion layer (an active base) 26, a base leading-out electrode 27, an N<+> diffusion layer (an emitter) 28 and an N<+> collector wall diffusion layer 29 are formed on the layer 21. Side-surface isolation insulating layers 30 for the emitter, protective insulating films 31 for the base leading- out electtode and electrode 32 are shaped. Consequently, base resistance is lowered because the electrode is taken directly to the P<-> diffusion layer 26 as the active base by the base leading-out electrode 27 from a side surface. Junction capacitance 11 between the collector and the base is reduced becaused the base isolation insulating film 24 is formed under the electrode 27. |
