| 摘要 |
PURPOSE:To control the temperature gradient of heating and cooling, and temperature distribution of the surface of a crystallizing region into single crystal, and to enhance the faculty and yield of a semiconductor device by a method wherein a laser beam is projected to an energy beam absorbing layer to heat the layer, and a non-single crystal semiconductor layer is molten making the former layer as a heat source. CONSTITUTION:A poly-Si layer 17 having high argon laser absorptivity is formed as an energy beam absorbing layer on an insulating layer. A laser beam is scanned thereon to heat the poly-Si layer 17 of energy beam absorbing layer through cap layers (reflection checking films) 18, 19, and moreover a poly-Si layer 14 is heated to be molten in order to the lateral direction from a seed part according to conduction heating from the poly-Si layer 17 thereof through an Si nitride film 16 and an SiO2 film 15 forming isolation layers, and the poly-Si layer 14 is recrystallized to be converted into a single crystal. |
