| 摘要 |
PURPOSE:To improve the mobility of carriers by a method wherein a single crystal semiconductor film on an insulating single crystal substrate is heated, the interface side of a load element forming region is brought to an amorphous state, and recrystallized through heat treatment, and ions are implanted to an active element forming region. CONSTITUTION:A single crystal silicon vapor phase growth film 2 is grown on an insulating single crystal substrate 1 in an epitaxial manner, and heated from the surface. Silicon ions are implanted to a load element region 5 while using a photoresist pattern 4 on an active element region 3 as a mask to form an amorphous layer 6. The pattern 4 is removed, and the amorphous layer 6 is grown in the epitaxial manner in the solid phase from the surface side through heat treatment to shape a recrystallized layer 7. A photoresist pattern 8 is formed on the load element region 5, and channelling ions are implanted in the predetermined direction to form an amorphous layer 9. Accordingly, the mobility of carriers is improved. |
