| 摘要 |
PURPOSE:To improve the luminance of light emission by inversely utilizing a metallic thin-film absorbing beams from a light-emitting section as a reflector plate and extracting beams from the semiconductor crystal substrate side to the outside. CONSTITUTION:An insulating film 12 is formed on an N type low-resistance ZnS crystal substrate 11, and an Au thin-film 13 is shaped on the insulating film 12. That is, MIS structure consisting of a metal-the insulating film-a semiconductor is formed. The crystal board 11 is eached to a mesa shape that the peripheral section of the crystal board 11 extends downward, and an ohmic electrode 14 is shaped to the peripheral section 16 of the substrate 11. Beams from a light- emitting section 15 emitting light by applying voltage between the metallic thin-film 13 and the ohmic electrode 14 are extracted to the substrated 11 side. Accordingly, beams from the light-emitting section 15 having MIS type structure are not absorbed by the Au thin-film 13, and the Au thin-film 13 is utilized inversely as a reflector plate. |
