SOLID-STATE IMAGE PICKUP DEVICE

摘要

PURPOSE:To attain the titled device capable of formation of high integrated circuit by forming a recessed part in an Si substrate and forming a P well differing in profile, improving the ability in blooming suppression, and selecting optionally spectral sensitivity. CONSTITUTION:The P well is formed in the (n) type Si substrate 21 by injecting or driving in boron or by epitaxial growth. Then, Si of a photodiode part (PD part) is so etched selectively that the P well 23 of the PD part to have a profile meeting requirements of blooming suppression. Further, an n<+> area 25 is formed in the window of the PD part 22.