| 摘要 |
PURPOSE:To form the control electrode of an FET being made fine and thus facilitate its manufacture by a method wherein a low-resistant film equipped with poly Si films on both surfaces is formed on an insulation film formed on a substrate. CONSTITUTION:An insulation film 4 is formed on the semiconductor substrate 2, and the lower poly Si film 10 is formed on the insulation film 4. Further, the low-resistant film 12 such as a silicide or a high melting point metal is formed on the Si film 10, and the upper poly Si film 14 is formed on this resistant film 12. Next, the control electrode 16 is formed by patterning. After the lower poly Si film 10' is formed on the insulation film 4 formed on the substrate 2, a low- resistant film 12' is formed by convergent beams. Successively, the upper poly Si film 14' is formed and patterned into the control electrode 16', and the poly Si films 20 are formed on both ends 18' of the electrode 16'. Then, washing and high frequency treatment are facilitated by preventing the outflow of metal ions in the manufacturing process, resulting in the formation of the control electrode being made fine. |
