| 摘要 |
PURPOSE:To achieve the desired high-quality vapor-deposition even in case of a thin film made of high-reactive substance with low electric power by jetting out a compound of a normal temperature gas to generate clusters and cooling a gas container to control size of the generated cluster. CONSTITUTION:The air in a tank 1 is exhausted to 10<-7>Torr and a compound SiH4 31 of a normal temp. gas is supplied by control of a valve 33. The internal gas pressure in a container 30 is kept at 10Torr when the compound is jetted out from a nozzle 30a to be made into clusters of SiH4 by adiabatic expansion. Liquid N2 is flown in a cooling pipe 34 to control a temp. of the gas container 30. As the temp. is lower, size of cluster becomes larger accordingly. H2 is separated by electrons from a filament 9 and cluster of Si is produced. A part of this become cluster ions 16 by ionization of component atoms and are accelerated in an electric field between electrodes 14 and thermion attracting electrodes 10 to be vapor-deposited on a substrate 18. Also, neutral clusters 15 are vapor- deposited on the substrate 18 by the kinetic energy of jetting. The H2 separated by an ionizing means 12 is exhausted from a tank 1. By this constitution, the desired high-quality thin film can be fabricated easily. |
