| 摘要 |
<p>A plasma etching composition which comprises chlorine in an amount from about 40% to about 90%, a shape modifier species in an amount from about 10% to about 60%, and an etching selectivity enhancer in an amount sufficient to render the composition at least about 10 times as effective for etching a wafer as for etching a masking layer, the above percents being by mole. The composition is useful for plasma etching of a semiconductor wafer, (10) masked with a masking layer (12) having an opening (20) therethrough exposing a portion of the wafer (10) which is to be etched in order to form a depression (24) of a desired depth. This allows depressions of increased depth to be formed in wafers without increasing the thickness of the masking layer.</p> |
