| 摘要 |
The invention relates to a capacitive semiconductor pressure pick-up in which there is formed, on a silicon single-crystal substrate, a p<+>-type layer (7) which is exposed in a region of the silicon single-crystal substrate removed by etching and forms a pressure-sensitive membrane section (11). There is applied to the p<+>-type layer (7) a silicon epitactical layer which is covered with an insulating layer (2) and, applied thereupon, a conductive coating (1). In the silicon epitactical layer (5) there is a cavity (12) which has been etched out through holes (3) in the conductive coating (1) and in the insulating layer (2), the metal layer (1) together with the membrane section (11) forming a pressure-sensitive measuring capacitor. In order to increase the measurement accuracy and sensitivity of the semiconductor pressure pick-up, the holes (3) are disposed around a wafer-shaped region of the insulating layer (2) and the conductive coating (1) so as to bound this region laterally, the area of the wafer-shaped region being smaller than the exposed area of the membrane section (11). <IMAGE>
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