| 摘要 |
PURPOSE:To increase the integration of inverters by a method wherein a single crystal or polycrystalline structural semiconductor further forming a channel is provided in the periphery of the two sides of a laminated body of three-layer lamination, and two insulated gate type semiconductor devices are provided by using this semiconductor. CONSTITUTION:Insulated gate type semiconductor devices IGF's 61 and 64 on a substrate are provided by complex to the same semiconductor blocks 13, 14, and 15 without alienation from each other, and then output 66 is obtained. With one IGF 64 as a load, the output 66 is obtained by an electrode 19, a drain 15, a channel 9, a source 13, and an electrode 12. The other IGF 61 is operated as a driver in the form of electrode 12, a drain 13, the channel 9, a source 15, and an electrode 68. As the result, the two IGF's can be integrally formed as a block. High speed action is enabled by putting a channel-forming region in a single or polycrystalline structure by a vertical channel in such a manner, thus making the second lamination insulation type, so as to impress large voltages between the first and third layers. |
