发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To obtain the titled device of plane light emitting type whereby the light output can be taken out above the element by a method wherein one of the output end surfaces of a semiconductor laser having a diffraction grating is formed obliquely, and a lensform projection is formed in opposition to the surface. CONSTITUTION:One output end surface 5 of a distributed feedback semiconductor laser containing an optical guide layer 3 having the diffraction grating 2 and an active layer 4 on a semiconductor substrate 1 is formed obliquely. The output end surface 5 is formed in inclination at an angle of total reflection to the laser oscillated light or more. The reflected light 6 there is emitted above the element from the substrate 1 side at a small angle of radiation or with convergency through the lensform projection 7 formed on the surface of the substrate 1. Since the reflection type semiconductor laser performs laser oscillation by utilizing the feedback of light due to the diffraction grating 2, the output end surface 5 is formed obliquely, and the reflected light 6 there can be taken out above the element.
申请公布号 JPS60124983(A) 申请公布日期 1985.07.04
申请号 JP19830233982 申请日期 1983.12.12
申请人 NIPPON DENKI KK 发明人 KITAMURA MITSUHIRO
分类号 H01S5/00;H01S5/12;H01S5/18 主分类号 H01S5/00
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