| 摘要 |
PURPOSE:To form an amorphous silicon hydride film with high productivity in the stage of decomposing monosilane and forming said film on the surface of a substrate in a plasma reaction chamber by providing a meshed electrode between discharge electrodes. CONSTITUTION:Discharge electrodes 9, 10 are installed in a plasma reaction chamber 7 and one electrode 10 is used as a holder for a base plate 14 to be treated. The inside of the chamber 7 is evacuated through an evacuation port 8 to a reduced pressure and the substrate 14 is heated to an intended temp. by a heater 15; at the same time, a gaseous mixture composed of gaseous SiH4 and gaseous H2 is supplied through an introducing pipe 12 into one electrode 9 and is released from many gas ejecting ports 11 toward the substrate 14. A high-frequency voltage is at the same time impressed from a high frequency power source 13 on both electrodes 9, 10 to generate glow discharge, thereby decomposing SiH4 and forming an amorphous silicon hydride film on the substrate 14. A meshed electrode 16 having the same potential as the potential of the electrode 9 is disposed between both electrodes 9 and 10 to prevent the direct exposure of the formed film to plasma and to form the amorphous silicon hydride film having good quality. |
