| 摘要 |
PURPOSE:To obtain a good-quality thin film by deflecting a path of cluster ions at a right angle by a deflecting means when producing a thin film on a substrate surface by bombardment of the cluster ions against the substrate surface in the device wherein a substance to be deposited is put in a crucible comprising a nozzle arranged in a vacuum tank and the substance jetted out from the nozzle is made into the cluster ions by ionizing means and accelerating electrodes. CONSTITUTION:A crucible 4 having a nozzle 4a on its top is arranged in a vacuum tank 1 having an exhaust path 2 at the bottom through insulating support members 19 and 20. The crucible 4 contains a substance to be deposited 5 such as copper. Next, filaments 6 for bombardment are wound around a periphery of the crucible 4 and these are surrounded with a heat shielding plate 7. The copper clusters jetting out of the nozzle 4a are changed into cluster ions 15 and excited cluster ions 16 by use of ionizing means 12 and accelerating electrodes 14 and these are bombarded against a surface of the substrate 18. In this constitution, directions of ion beams 36 and 37 are changed into a right-angle direction by a deflecting means 32 and only the ions 15 and 16 are bombarded against the surface of the substrate 18. |
