| 摘要 |
PURPOSE:To simplify a unit construction, to reduce required electric power and to prevent the substrate temperature from rising, by exciting clusters outside a metallic vapor generating source through radiation of laser beams, while radiating light to vapor within the generating source so as to generate excited clusters. CONSTITUTION:A substrate 18 is supported by a support 22. Si 5 is received in a crucible 4 and the pressure within a tank 1 is made about 10<-6>Torr. The Si 5 is hested by a heater 6 to about 2,000 deg.C to produce an Si vapor pressure 0.1- 10Torr. Cluster beams jetting from a nozzle 4a are radiated with lasers 31 from a light source 30 so as to form excited clusters 36. These excited clusters, together with non-excited clusters, are caused to impinge on the substrate 18 with the kinetic energy at the time of jetting, so that an Si thin film is deposited on the substrate. Alternatively, laser beams 31 may be radiated to Si vapor within the crucible 4, and in this case the light source can be further miniturized. The radiated beams 31 may be visible light. Accordingly to this constitution, an excellent vapor film can be formed by means of a device of a simple construction with low power consumption and without elevation of the substrate temperature. |
