| 摘要 |
PURPOSE:To contrive to improve the controllability of the resistance value of a semiconductor layer and the reproducibility by a method wherein annealing is accomplished in such a manner that the impurity element ion-implanted to the semiconductor layer is not captured by the grain boundary of the semiconductor layer. CONSTITUTION:A semiconductor thin layer made of polycrystalline Si serving as a resistor is formed on a thermal oxide film on the surface of a semiconductor substrate. Next, the impurity element serving as a carrier is ion-implanted to this semiconductor thin layer. Thereafter, the implanted impurity element is activated in each crystal grain, and the purposed resistor is formed by annealing at a temperature whereby the element is not captured by the grain boundary. Thus, annealing is accomplished under the condition of restricting the diffusion of the implanted impurity in each crystal grain of the polycrystalline Si layer, thereby the controllability of the resistance value of a resistor made of a polycrystalline Si layer can be increased, and then resistors and the like of stability with good reproducibility can be obtained. |
