| 摘要 |
PURPOSE:To absorb an excessive signal (smear) accumulated in a drain area of an MOS transistor (TR) and to reduce the shading of the outline of a picture remarkably by forming a depletion area under the drain area by applying a bias. CONSTITUTION:When strong light is made incident to an N type photodetecting area 13, the incident light in not stayed in the photodetecting area 13, deeply incorporated into a P type substrate 11 on the lower layer and electrons are generated in the P type substrate 11. In an ordinary type solid-state image pickup plate, the electrons generated in the P type substrate 11 is incorporated into an N type drain area 15 and stored in the drain area 15 and smear phenomenon appears, but in the invented solid-state image pickup plate, an N<+> type smear absrobing embedded layer 20 is formed under the N type drain area and the electrons generated in the P type substrate 11 are absorbed into the embedded layer 20. Consequently, the smear phenomenon is reduced remarkably.
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