| 发明名称 |
MASK FOR OBTAINING TEXTURIZED PATTERNS IN RESIST LAYERS USING X-RAY LITHOGRAPHY, AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p>A mask for X-ray lithography is formed of a multilayer diaphragm with a patterned absorber layer on the diaphragm. The diaphragm includes a layer of magnesium and at least one intermediate layer.</p> |
| 申请公布号 |
EP0104685(A3) |
申请公布日期 |
1985.07.03 |
| 申请号 |
EP19830201242 |
申请日期 |
1983.08.31 |
| 申请人 |
PHILIPS PATENTVERWALTUNG GMBH;N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
LENTFER, ARNO;LUTHJE, HOLGER |
| 分类号 |
G03F1/22;G03F7/20;H01L21/027;(IPC1-7):G03F1/00 |
主分类号 |
G03F1/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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