发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a short circuit between a cathode electrode film and a gate cathode by coating a defective hole generated in a surface stabilized film with a proper insulating film. CONSTITUTION:A cathode electrode film 5 is made of aluminum, and a surface stabilized film 7 consists of a composite film of phosphorus glass and silicon dioxide chemically attached to a thermal oxide film. Gate and cathode electrode films 4, 5 are formed through the boring of a window-evaporation-selective etching after shaping the surface stabilized film 7. A polyimide group resin is applied twice through a spin application method in order to form an insulating film on the surface stabilized film 7 thermally treated with an aluminum chelate liquid, and cured in air gas. The resin on the gate and cathode electrode films 4, 5 is removed through etching by photolithography, and a defective hole A is buried completely with the resin 8 fitted in this manner. Accordingly, a cathode electrode plate 6 is not brought into contact with a PB layer from the defective hole A even when the cathode electrode plate 6 is pushed and the cathode electrode film 5 is deformed.
申请公布号 JPS60124870(A) 申请公布日期 1985.07.03
申请号 JP19830231382 申请日期 1983.12.09
申请人 HITACHI SEISAKUSHO KK 发明人 OKANO SADAO;YAO TSUTOMU;OIKAWA SABUROU;SANBE ISAMU;SAKURADA SHIYUUROKU
分类号 H01L29/78;H01L29/417;H01L29/74;H01L29/76;H01L29/772 主分类号 H01L29/78
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