| 摘要 |
Discrete electrical through connections in a semiconductor wafer (1), which may include integrated circuit device components or which carries a separate element containing the integrated circuit device components, are comprised by apertures extending through the wafer and hermetically blocked by respective metallic members (9, 11). The metallic members (9, 11) are electrically isolated from the wafer (1), by e.g. electrically insulating material (2, 8) disposed therebetween or junction isolation, and extend towards both faces of the wafer where they may provide contact pads or conductive tracks. Anisotropic etching techniques from one or both faces of the wafer may be employed. Using the technique very high pin count (interconnection) densities may be achieved; this being particularly useful for VLSI devices. <IMAGE> |
