| 摘要 |
<p>A switching transistor (2) has its emitter connected to one side of a reactor (5) (inductance L) whose other side is connected to one side of a diode arrangement (6) whose other side is connected to the base of the transistor (2). Thus when the transistor is switched off, decay of the current through the transistor, and thus in the reactor (5), generates an e.m.f. across the reactor (5) which is supplied via the diode arrangement (6) to the base of the transistor. By suitable construction of the diode arrangement (6) a desired decay characteristic can be obtained to limit current surge into a snubber circuit (3) associated with the switching transistor.</p> |
