| 摘要 |
PURPOSE:To realize a flattened surface whereon a multilayer wiring can be built with ease by a method wherein wiring holes are provided in an insulating film covering the surface of a substrate and then a coat of electrode wiring material is laid. CONSTITUTION:An element forming region 2 and an element isolating film 3 are formed on a semiconductor substrate 1. A phosphate-silicate glass film 4 is formed and holes are provided therein by using a photoresist for the formation of an electrode wiring pattern. A process follows wherein a coat is laid of electrode wiring material 5, by means of vapor depositing or sputtering, roughly similar to the glass film 4 in thickness. The electrode wiring material 5 is removed leaving behind an electrode wiring . The electrode wiring pattern depends for its precision on the precision wherewith etching is performed against the uniformly formed insulating film and the surface of the wiring here is virtually flat. Application of this technique to the formation of multilayer wirings results in a mechanically, electrically reliable multilayer wiring. |
