METHOD OF MAKING A FIELD EFFECT TRANSISTOR,申请号EP19820101421-传众专利搜索

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发明名称	METHOD OF MAKING A FIELD EFFECT TRANSISTOR
摘要
申请公布号	EP0063221(B1)	申请公布日期	1985.07.03
申请号	EP19820101421	申请日期	1982.02.25
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	FOWLER, ALAN BICKSLER;ROSENBERG, ROBERT;RUPPRECHT, HANS STETHAN
分类号	H01L29/80;H01L21/033;H01L21/225;H01L21/338;H01L29/417;H01L29/78;H01L29/812;(IPC1-7):H01L21/225	主分类号	H01L29/80
代理机构		代理人
主权项
地址

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