| 摘要 |
PURPOSE:To obtain the sufficiently fast speed of response and large photocurrents in the same manner as optical incidence from the substrate side even in optical incidence from the electrode layer side by making incident beams reach to at least one part of a photoconductive layer under an ohmic contact layer formed between the photoconductive layer and the electrode layer. CONSTITUTION:An a-Si photoconductive layer 12, an a-Sin<+> layer 13 and an Al electrode layer 14 are formed extending over the whole surface of a glass substrate 11. Likewise, each photosensor the same as conventional devices is shaped through photolithographic patterning and dry etching. The Al electrode is photolithographic-etched in 100mum on a meandering section and formed to a shape shown in the figure in order to form two electrode layers 14 obtained by removing only the Al electrode on the meandering section. |
