| 摘要 |
PURPOSE:To prevent the formation of a crevice in a flattened surface by a method wherein a groove is formed in a semiconductor substrate, a film of a specified thickness is grown of insulating material, etching is performed, and an insulating film is again deposited to build an element insulating-isolating layer filling up the groove. CONSTITUTION:A U-shaped groove 24 is formed in an Si substrate 21, an insulating film 25 is formed to cover th wall of the groove 24, a polycrystalline Si layer 23 is grown until its thickness T is half the width W of the opening of the U-shaped groove. The mouth of a cavity 26 at the middle of the U-shaped groove 24 is now almost closed. The end of the growth is determined to be somewhere in a range covered by T<=W/2. Etching is performed for the removal of the polycrystalline Si 23 from the surface of the substrate 21 and then, again, polycrystalline Si is grown for the formation of a polycrystalline Si layer 23a to fill up the cavity 26. Polishing is accomplished to removed polycrystalline Si from the Si substrate 21 for the flattening of the surface. Polycrystalline Si keeps the cavity 27 deep in the groove 24 thereby preventing the cavity 27 from causing a crevice on the surface of the Si substrate 21. |
