SEMICONDUCTOR MEMORY DEVICES

摘要

In addition to a main memory device a spare memory device is provided. Both memory devices utilize word wires in common which are arranged to constitute matrix circuits together with groups of bit lines. When a bit error is contained in data read out from the main memory device, a correction circuit correcting the error and a register for storing the error are provided. An output of the register is used to switch a bit line from which the error has been detected to a corresponding bit line of the spare memory device.