| 摘要 |
<p>A semiconductor device includes a polycrystalline semiconductor film body having at least one element selected from a group consisting of hydrogen, fluorine, chlorine, bromine, iodine, lithium, sodium, potassium, rubidium and cesium included mainly around grain boundaries of the polycrystalline semiconductor film. The simultaneous inclusion of one of halogen elements and one of hydrogen and monovalent metal elements, of the group described above is more effective to quench charges of the elements included. The content of the elements included is 100 ppm to 40% by atom ratio. As a result, an electronic characteristic of the polycrystalline semiconductor film is substantially improved.</p> |
